Memory element

ABSTRACT

According to one embodiment, a memory element includes a first layer, a second layer, and a third layer. The first layer is conductive. The second layer is conductive. The third layer includes hafnium oxide and is provided between the first layer and the second layer. The first layer includes a first region, a second region, and a third region. The first region includes a first element and a first metallic element. The first element is selected from a group consisting of carbon and nitrogen. The second region includes a second metallic element and is provided between the first region and the third layer. The third region includes titanium oxide and is provided between the second region and the third layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2017-179560, filed on Sep. 19, 2017; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a memory element.

BACKGROUND

A memory element and a memory device that use a variable resistanceelement including a ferroelectric have been proposed. It is desirablefor the on-current of such a memory element to be large.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view illustrating a memory elementaccording to an embodiment;

FIG. 2A and FIG. 2B are graphs illustrating characteristics of memoryelements;

FIG. 3A and FIG. 3B are graphs illustrating analysis data of the memoryelements;

FIG. 4A to FIG. 4C are schematic views illustrating the ferroelectriclayers of the memory elements;

FIG. 5A to FIG. 5C are schematic cross-sectional views in order of theprocesses, illustrating the method for manufacturing the memory elementaccording to the embodiment;

FIG. 6A to FIG. 6D are schematic perspective views illustrating memorydevices according to the embodiment;

FIG. 7 is a schematic plan view illustrating the memory device accordingto the embodiment;

FIG. 8 is a schematic perspective view illustrating a memory deviceaccording to an embodiment;

FIG. 9 is a schematic cross-sectional view illustrating a portion of thememory device according to the embodiment; and

FIG. 10 is a schematic cross-sectional view illustrating a portion ofthe memory device according to the embodiment.

DETAILED DESCRIPTION

According to one embodiment, a memory element includes a first layer, asecond layer, and a third layer. The first layer is conductive. Thesecond layer is conductive. The third layer includes hafnium oxide andis provided between the first layer and the second layer. The firstlayer includes a first region, a second region, and a third region. Thefirst region includes a first element and a first metallic element. Thefirst element is selected from a group consisting of carbon andnitrogen. The second region includes a second metallic element and isprovided between the first region and the third layer. The third regionincludes titanium oxide and is provided between the second region andthe third layer.

Various embodiments will be described hereinafter with reference to theaccompanying drawings.

The drawings are schematic or conceptual; and the relationships betweenthe thicknesses and widths of portions, the proportions of sizes betweenportions, etc., are not necessarily the same as the actual valuesthereof. Further, the dimensions and/or the proportions may beillustrated differently between the drawings, even for identicalportions.

In the drawings and the specification of the application, componentssimilar to those described in regard to a drawing thereinabove aremarked with like reference numerals, and a detailed description isomitted as appropriate.

FIG. 1 is a schematic cross-sectional view illustrating a memory elementaccording to an embodiment.

As shown in FIG. 1, the memory element 100 according to the embodimentincludes a first layer 10, a second layer 20, and a third layer 30.

The memory element 100 is, for example, a nonvolatile memory element.The memory element 100 is, for example, one memory cell of a FTJ(Ferroelectric Tunnel Junction) memory utilizing a ferroelectric.

At least a portion of the first layer 10 is a conductive layer that isconductive. The first layer 10 is, for example, an upper electrode ofthe memory element 100. The first layer 10 includes a metallic element.The first layer 10 may include a first element. The first elementincludes at least one selected from the group consisting of C (carbon)and N (nitrogen).

At least a portion of the second layer 20 is a conductive layer that isconductive. The second layer 20 is, for example, a lower electrode ofthe memory element 100. The second layer 20 includes a second element.The second element includes at least one selected from the groupconsisting of silicon (Si), Ge (germanium), Ta (tantalum), Nb (niobium),V (vanadium), W (tungsten), Fe (iron), Mo (molybdenum), Co (cobalt), Ni(nickel), Ru (ruthenium), Ir (iridium), Cu (copper), Pd (palladium), Ag(silver), Pt (platinum), and Ti (titanium). The second layer 20includes, for example, at least one of a semiconductor layer, a metallayer, or a metal compound layer.

In the example, the second layer 20 includes a first lower electrodelayer 21 and a second lower electrode layer 22. The first lowerelectrode layer 21 includes TiN (titanium nitride). The second lowerelectrode layer 22 is provided between the first lower electrode layer21 and the third layer 30. The second lower electrode layer 22 includespolycrystalline silicon to which an n-type impurity such as P(phosphorus) or the like is added.

The third layer 30 is provided between the first layer 10 and the secondlayer 20. For example, the third layer 30 contacts the first layer 10.The third layer 30 includes a ferroelectric. In the example, the thirdlayer 30 includes hafnium oxide as the ferroelectric. The thickness (thelength along a Z-axis direction) of the third layer 30 is, for example,not less than 1 nm and not more than 10 nm.

The memory element 100 further includes a fourth layer 40 providedbetween the second layer 20 and the third layer 30. For example, thefourth layer 40 contacts the second layer 20 and the third layer 30. Thefourth layer 40 is, for example, a paraelectric layer. The fourth layer40 includes a third element. The third element includes at least oneselected from the group consisting of silicon, aluminum, tantalum, andtungsten. The fourth layer 40 includes at least one of an oxide or ametal oxide of a semiconductor. The fourth layer 40 includes, forexample, at least one of silicon oxide, aluminum oxide, tantalum oxide,or tungsten oxide. The thickness (the length along the Z-axis direction)of the fourth layer 40 is, for example, not less than 1 nm and not morethan 10 nm.

The direction from the second layer 20 toward the first layer 10 istaken as the Z-axis direction (a first direction). One directionperpendicular to the Z-axis direction is taken as an X-axis direction. Adirection perpendicular to the Z-axis direction and perpendicular to theX-axis direction is taken as a Y-axis direction.

The memory element 100 includes a variable resistance layer providedbetween the upper electrode (the first layer 10) and the lower electrode(the second layer 20) and is a two-terminal FTJ element. The third layer30 and the fourth layer 40 correspond to the variable resistance layer.The polarization of the ferroelectric is changed by a voltage appliedbetween the first layer 10 and the second layer 20. Thereby, theelectrical resistance of the memory element 100 (the electricalresistance between the first layer 10 and the second layer 20) changes.In other words, the on-state in which the electrical resistance of thememory element 100 is low and the off-state in which the electricalresistance of the memory element 100 is high are switched.

As shown in FIG. 1, the first layer 10 includes a first region 11, asecond region 12, and a third region 13.

The first region 11 includes a first metallic element. The firstmetallic element includes, for example, at least one selected from thegroup consisting of titanium, tantalum, and tungsten. For example, thefirst region 11 suppresses reactions between the second region 12 and aninterconnect layer (described below) provided on the first region 11. Inthe example, the first region 11 includes a first element (e.g.,nitrogen) described above. In the example, the first region 11 istitanium nitride. The thickness (the length along the Z-axis direction)of the first region 11 is, for example, not less than 1 nm and not morethan 50 nm. The material of the first region 11 may be the same as ordifferent from the material of the third region 13.

The second region 12 is provided between the first region 11 and thethird layer 30. For example, the second region 12 is continuous with thefirst region 11 or in contact with the first region 11. The secondregion 12 includes a second metallic element and oxygen. The secondmetallic element includes, for example, at least one selected from thegroup consisting of Ti (titanium), Ce (cerium), Eu (europium), Zr(zirconium), Ba (barium), Al (aluminum), Hf (hafnium), Sr (strontium),La (lanthanum), Mg (magnesium), Nd (neodymium), Yb (ytterbium), Sm(samarium), Dy (dysprosium), Lu (lutetium), Ho (holmium), Tm (thulium),Er (erbium), Ca (calcium), and Y (yttrium). The second metallic elementmay be the same as the first metallic element or may be different fromthe first metallic element. In the example, the second region 12 istitanium. The second region 12 may include titanium oxide and/ortitanium nitride. The thickness (the length along the Z-axis direction)of the second region 12 is, for example, not less than 1 nm and not morethan 10 nm.

The third region 13 is provided between the second region 12 and thethird layer 30. For example, the third region 13 is continuous with thesecond region 12 or in contact with the second region 12. For example,the third region 13 contacts the third layer 30. The third region 13includes titanium and oxygen. The third region 13 includes, for example,titanium oxide. The titanium oxide that is included in the third region13 is, for example, tetragonal (rutile-type) titanium dioxide. Forexample, the third region 13 suppresses reactions between the thirdlayer 30 and the second region 12. The thickness (the length along theZ-axis direction) of the third region 13 is, for example, not less than1 nm and not more than 10 nm.

For example, the third region 13 does not include the first element(e.g., nitrogen). Or, for example, the third region 13 includes thefirst element; and the concentration of the first element in the thirdregion 13 is lower than the concentration of the first element in thefirst region 11.

For example, the second region 12 does not include the first element.Or, for example, the second region 12 includes the first element; andthe concentration of the first element in the second region 12 is higherthan the concentration of the first element in the third region 13 andlower than the concentration of the first element in the first region11.

The oxygen concentration in the third region 13 is, for example, higherthan the oxygen concentration in the second region 12. For example, thefirst region 11 does not include oxygen. Or, for example, the firstregion 11 includes oxygen; and the oxygen concentration in the firstregion 11 is lower than at least one of the oxygen concentration in thesecond region 12 or the oxygen concentration in the third region 13.

For example, the concentrations in the embodiment are concentrations(atoms/cm³) measured by SIMS (Secondary Ion Mass Spectrometry). Theconcentration (atomic %) and the composition of each layer and/or eachregion may be measured by TEM-EDX (energy dispersive X-rayspectrometry), TEM-EELS (electron energy loss spectrometry), etc.

A first layer 10 such as that described above is stacked on the secondlayer 20 and the third layer 30. It was found by investigations by theinventors of the application that the on-current (the current value inthe on-state) of the memory element 100 becomes large thereby.

FIG. 2A and FIG. 2B are graphs illustrating characteristics of memoryelements.

These figures show a characteristic C100 of the memory element 100according to the embodiment and a characteristic C109 of a memoryelement 109 of a reference example.

In the memory element 109 of the reference example, the third region andthe first region of the upper electrode each include titanium nitride;and the second region includes titanium. In the memory element 109, forexample, the nitrogen concentration in the third region is higher thanthe nitrogen concentration in the second region. The materials of thesecond to fourth layers of the memory element 109 are similar to thoseof the memory element 100.

The horizontal axis of FIG. 2A illustrates a voltage Va (arbitraryunits) applied to the memory element 100 or 109, i.e., a voltage appliedbetween the upper electrode and the lower electrode. The vertical axisof FIG. 2A illustrates an on-current Ion (arbitrary units) flowing inthe memory element 100 or 109, i.e., a current flowing between the upperelectrode and the lower electrode. As shown in FIG. 2A, the on-current(e.g., the current value when the voltage is V1) of the memory element100 is larger than the on-current of the memory element 109.

The horizontal axis of FIG. 2B illustrates a retention time t (arbitraryunits) in the on-state, i.e., the elapsed time from when the memoryelement is set to the on-state. The vertical axis of FIG. 2B illustratesthe on-current Ion (arbitrary units) of the memory element. As shown inFIG. 2B, as time elapses, the decrease of the on-current of the memoryelement 100 is smaller than the decrease of the on-current of the memoryelement 109. In other words, the retention characteristics of the memoryelement 100 are improved compared to the retention characteristics ofthe memory element 109 of the reference example.

Thus, according to the embodiment, a memory element is provided in whichthe on-current is large. According to the embodiment, a memory elementis provided in which the retention characteristics are improved. Forexample, it is conjectured that this is because the orientation of thehafnium oxide of the third layer 30 is aligned by the first layer 10(the third region 13). For example, it is conjectured that thepolarization axis of the hafnium oxide is easily aligned with the Z-axisdirection.

FIG. 3A and FIG. 3B are graphs illustrating analysis data of the memoryelements.

FIG. 3A is EELS data of the memory element 100 according to theembodiment. FIG. 3B is EELS data of the memory element 109 of thereference example. The vertical axis illustrates an intensity Int(arbitrary units); and the horizontal axis illustrates a position Rz(arbitrary units) in the Z-axis direction. The scan direction of theEELS measurement is the direction from the first layer 10 toward thesecond layer 20.

Similarly to the example of FIGS. 2A and 2B, in the memory element 100of the example, the first region 11 includes titanium nitride; thesecond region 12 includes titanium; and the third region 13 includestitanium oxide. In other words, nitrogen is used as the first element;and titanium is used as the first metallic element and the secondmetallic element. The second region 12 of the memory element 100includes polycrystalline silicon; the third layer 30 includes hafniumoxide; and the fourth layer 40 includes silicon oxide. On the otherhand, in the memory element 109, the first region and the third regioninclude titanium nitride; and the second region includes titanium.

As shown in FIG. 3A, a peak Pn (the maximum value) of the nitrogenconcentration in the first layer 10 is positioned in the first region11. The nitrogen concentration in the second region 12 is lower than thenitrogen concentration in the first region 11. The nitrogenconcentration in the third region 13 is lower than the nitrogenconcentration in the second region.

A peak Pt (the maximum value) of the concentration of titanium in thefirst layer 10 is positioned in the first region 11. The concentrationof titanium in the second region 12 is lower than the concentration oftitanium in the first region 11. The concentration of titanium in thethird region 13 is lower than the concentration of titanium in thesecond region 12.

The maximum value of the oxygen concentration in the first layer 10 ispositioned in the third region 13. The oxygen concentration in thesecond region 12 is lower than the oxygen concentration in the thirdregion 13. The oxygen concentration in the first region 11 is lower thanthe oxygen concentration in the second region. For example, in the firstlayer 10, the oxygen concentration decreases monotonously along thedirection from the third layer 30 toward the first layer 10.

FIG. 4A to FIG. 4C are schematic views illustrating the ferroelectriclayers of the memory elements.

FIG. 4A and FIG. 4B illustrate a spectrum S100 of X-ray analysis of theferroelectric layer (the third layer 30) of the memory element 100according to the embodiment and a spectrum S109 of X-ray analysis of theferroelectric layer of the memory element 109 of the reference example.Cu-k α-rays are used in the X-ray analysis shown in FIG. 4A and FIG. 4B.

As shown in FIG. 4A, peaks of the intensity Int are confirmed at the2θχ/ϕ(°)=25° vicinity, the 2θχ/ϕ(°)=30° vicinity, and the 2θχ/ϕ(°)=35°vicinity. It can be seen that the hafnium oxide included in the thirdlayer 30 has an orthorhombic crystal structure.

In the memory element 100 as shown in FIG. 4B, a peak P1 at the2θχ/ϕ(°)=34 to 35° vicinity and a peak P2 at the 2θχ/ϕ(°)=35 to 36°vicinity are observed. The peak P1 corresponds to the (020) plane oforthorhombic hafnium oxide. The peak P2 corresponds to the (002) planeand the (200) plane of orthorhombic hafnium oxide. The hafnium oxidethat is included in the third layer 30 is, for example, a singleorthorhombic phase.

As shown in FIG. 4C, the crystal lattice of hafnium oxide has thea-axis, the b-axis (the long axis), and the c-axis (the polarizationaxis). In the embodiment, for example, the b-axis is aligned with theX-Y plane (the second direction perpendicular to the Z-axis direction).In other words, the c-axis (the polarization axis) is aligned with theZ-axis direction. Due to the X-ray analysis, it is considered that theproportion of the c-axis oriented in the Z-axis direction is high forthe embodiment compared to the reference example.

The third layer 30 includes, for example, silicon. The third layer 30is, for example, hafnium oxide (HfSiO) to which silicon is added. Theconcentration of silicon in the third layer 30 is, for example, not lessthan about 1 atomic percent (at %) and not more than about 10 at %.Thereby, for example, the hafnium oxide easily has a single orthorhombicphase. Other than silicon, the hafnium oxide of the third layer 30 mayinclude at least one element selected from the group consisting of Zr,Al, Y, Sr, La, Ce, Gd, and Ba.

For example, the standard free energy of formation of the oxide of thesecond metallic element included in the second region 12 is lower thanthe standard free energy of formation of the oxide of the second elementincluded in the second layer 20. The standard free energy of formationis the free energy of formation when forming an oxide under theconditions of 298.15 K and 1 atmosphere. Elements that have low standardfree energies of formation of the oxide are easy to oxidize. In otherwords, the second region 12 includes the second metallic element that isoxidized more easily than the second element included in the secondlayer 20.

For example, the second element is silicon; and the second metallicelement is titanium. The standard free energy of formation of an oxideof titanium is lower than the standard free energy of formation of anoxide of silicon. Titanium oxidizes more easily than silicon.

The standard free energy of formation of the oxide of the secondmetallic element included in the second region 12 is lower than thestandard free energy of formation of the oxide of the third elementincluded in the fourth layer 40. In other words, the second region 12includes the second metallic element that is oxidized more easily thanthe third element included in the fourth layer 40. For example, thethird element is silicon; and the second metallic element is titanium.

Thus, the second region 12 includes the second metallic element that isoxidized relatively easily. Thereby, a thick effective film thickness ofthe variable resistance layer (the fourth layer 40) is suppressed.Thereby, the on-current can be large with respect to the off-current.

An example of a method for manufacturing the memory element 100according to the embodiment will now be described.

FIG. 5A to FIG. 5C are schematic cross-sectional views in order of theprocesses, illustrating the method for manufacturing the memory elementaccording to the embodiment.

As shown in FIG. 5A, the fourth layer 40 is formed on the second layer20. A hafnium oxide film 30 f that is used to form the third layer 30 isformed on the fourth layer 40.

Subsequently, as shown in FIG. 5B, a titanium oxide film 13 f that isused to form at least a portion of the third region 13 is formed as abarrier metal on the hafnium oxide film 30 f; and, for example, heattreatment is performed at not less than about 600° C. and not more thanabout 1100° C.

Subsequently, as shown in FIG. 5C, a titanium film 12 f that is used toform at least a portion of the second region 12 is formed on thetitanium oxide film 13 f. A titanium nitride film 11 f that is used toform at least a portion of the first region 11 is formed on the titaniumfilm 12 f. Subsequently, heat treatment is performed at not less thanabout 600° C. and not more than about 1100° C.; and the memory element100 is manufactured. By the heat treatment, the hafnium oxide iscrystallized; and a ferroelectric is produced.

Desorption of oxygen from the hafnium oxide occurs in the heattreatment. Due to the oxygen, there is a possibility that an oxidationreaction may occur in the second layer 20 and/or the fourth layer 40;and an oxide may be formed. There is a possibility that the variableresistance layer (the fourth layer 40) effectively may become thickaccording to the thickness of the oxide.

Conversely, in the embodiment, the second region 12 includes the secondmetallic element having the small standard free energy of formation ofthe oxide. In the heat treatment, the oxygen that has desorbed from thehafnium oxide reacts easily with the second metallic element. Thereby,the oxidation reactions of the second layer 20 and/or the fourth layer40 can be suppressed. Accordingly, a thick effective film thickness ofthe fourth layer 40 can be suppressed.

FIG. 6A to FIG. 6D are schematic perspective views illustrating memorydevices according to the embodiment.

The memory devices according to the embodiment are, for example,cross-point nonvolatile memory devices. A stacked body that includes thefirst layer 10, the second layer 20, the third layer 30, and the fourthlayer 40 is used in the nonvolatile memory devices according to theembodiment.

In a memory device 121 according to the embodiment as shown in FIG. 6A,the first layer 10 extends in the second direction. The second directionis the X-axis direction. For example, the X-axis direction is orthogonalto the Z-axis direction (the stacking direction). The second layer 20extends in a third direction. The third direction is the Y-axisdirection. For example, the Y-axis direction is orthogonal to the X-axisdirection and the Z-axis direction.

The third layer 30 overlaps a portion of the first layer 10 whenprojected onto a plane (the X-Y plane) perpendicular to the Z-axisdirection. The third layer 30 overlaps a portion of the second layer 20when projected onto the X-Y plane. The third layer 30 overlaps theregion where the first layer 10 and the second layer 20 overlap whenprojected onto the X-Y plane.

In the example, the first layer 10 is used as one interconnect; and thesecond layer 20 is used as one other interconnect. The third layer 30 isprovided at the position where these interconnects cross.

As shown in FIG. 6B, a first interconnect 41 is provided in a memorydevice 122. The first interconnect 41 extends in the X-axis direction.The second layer 20 extends in the Y-axis direction. The third layer 30overlaps a portion of the second layer 20 when projected onto the X-Yplane. The third layer 30 and the first layer 10 are provided betweenthe first interconnect 41 and the second layer 20. The first layer 10,the third layer 30, and the second layer 20 overlap a portion of thefirst interconnect 41 when projected onto the X-Y plane.

As shown in FIG. 6C, a second interconnect 42 is provided in a memorydevice 123. The second interconnect 42 extends in the Y-axis direction.The first layer 10 extends in the X-axis direction. The third layer 30overlaps a portion of the first layer 10 when projected onto the X-Yplane. The third layer 30 and the second layer 20 are provided betweenthe second interconnect 42 and the first layer 10. The first layer 10,the third layer 30, and the second layer 20 overlap a portion of thesecond interconnect 42 when projected onto the X-Y plane.

As shown in FIG. 6D, the first interconnect 41 and the secondinterconnect 42 are provided in a memory device 124. The firstinterconnect 41 extends in the X-axis direction. The second interconnect42 extends in the Y-axis direction. The first layer 10, the third layer30, and the second layer 20 are disposed between the first interconnect41 and the second interconnect 42.

In the embodiment, at least one of the first layer 10 or the secondlayer 20 may be used as an interconnect. An interconnect (at least oneof the first interconnect 41 or the second interconnect 42) may beprovided separately from the first layer 10 and the second layer 20.

The stacked film that includes the third layer 30 may have a prismconfiguration or a circular columnar configuration (including aflattened circular configuration).

FIG. 7 is a schematic plan view illustrating the memory device accordingto the embodiment.

As shown in FIG. 7, multiple interconnects 61 and multiple interconnects62 are provided in the memory device 125. The multiple interconnects 61are parallel to each other. The multiple interconnects 62 are parallelto each other. The direction in which the interconnects 61 extendcrosses the direction in which the interconnects 62 extend. For example,the interconnect 61 includes the first layer 10 or the firstinterconnect 41. For example, the interconnect 62 includes the secondlayer 20 or the second interconnect 42. For example, the interconnects61 are used as word lines. For example, the interconnects 62 are used asbit lines.

Multiple stacked bodies (at least the third layers 30) are providedrespectively at the crossing portions between the multiple interconnects61 and the multiple interconnects 62. The interconnects 61 and theinterconnects 62 are connected to a controller 63 (a control circuit).One of the multiple third layers 30 is set to a selected state by theinterconnects 61 and the interconnects 62; and the desired operation isperformed. The memory device 125 is a cross-point resistance randomaccess memory.

A substrate 64 is provided in the memory device 125. The interconnects61 and the interconnects 62 are provided on the substrate 64. Thestacking order of the stacked body including the first layer 10, thethird layer 30, and the second layer 20 is arbitrary. For example, thesecond layer 20 may be disposed between the substrate 64 and the firstlayer 10. On the other hand, the first layer 10 may be disposed betweenthe substrate 64 and the second layer 20. The Z-axis direction may crossthe major surface of the substrate 64.

Multiple stacked bodies (the first layer 10, the third layer 30, and thesecond layer 20) may be stacked. In other words, the embodiment isapplicable to a cross-point memory having a three-dimensionally stackedstructure.

FIG. 8 is a schematic perspective view illustrating a memory deviceaccording to an embodiment.

Some of the insulating portions are not illustrated in FIG. 8.

As shown in FIG. 8, multiple first interconnects 71 and multiple secondinterconnects 72 are provided in the memory device 210 according to theembodiment. The memory device 210 further includes multiple thirdinterconnects 73 and multiple fourth interconnects 74.

The multiple first interconnects 71 are arranged in the third direction(e.g., the Y-axis direction) and the first direction (e.g., the Z-axisdirection). The multiple first interconnects 71 are substantiallyparallel to each other. The first interconnect 71 includes, for example,the first layer 10 or the first interconnect 41. In the example, thefirst interconnect 71 is a stacked body of the first layer 10 and aconductive portion 71 c.

The multiple second interconnects 72 are arranged in the seconddirection (e.g., the X-axis direction) and the first direction (e.g.,the Z-axis direction). The multiple second interconnects 72 aresubstantially parallel to each other. The second interconnect 72includes, for example, the second layer 20 or the second interconnect42. In the example, the second interconnect 72 includes the second layer20.

One of the multiple third interconnects 73 extends in the firstdirection (e.g., the Z-axis direction). The multiple third interconnects73 are arranged in the X-axis direction. The multiple thirdinterconnects 73 are substantially parallel to each other.

One of the multiple fourth interconnects 74 extends in the seconddirection (e.g., the X-axis direction). The multiple fourthinterconnects 74 are arranged in the Z-axis direction. The multiplefourth interconnects 74 are substantially parallel to each other.

For example, the multiple first interconnects 71 correspond to wordlines WL. For example, the multiple second interconnects 72 correspondto local bit lines BL. The multiple third interconnects 73 correspond toglobal bit lines GBL. The multiple fourth interconnects 74 correspond toselection gate lines SGL.

A semiconductor region 55 and an insulating film 551 are provided in thememory device 210. Multiple semiconductor regions 55 and multipleinsulating films 551 are provided. One of the multiple semiconductorregions 55 is provided between one of the multiple second interconnects72 and one of the multiple third interconnects 73. The semiconductorregion 55 functions as a portion of a selection transistor. The fourthinterconnect 74 functions as a gate electrode of the selectiontransistor. The insulating film 551 functions as a gate insulating filmof the selection transistor.

The fourth interconnects 74 are positioned between the multiple firstinterconnects 71 and a portion of the third interconnects 73 in thethird direction (e.g., the Y-axis direction). The insulating film 551 isprovided between the semiconductor region 55 and a portion of the fourthinterconnects 74 in the first direction (e.g., the Z-axis direction).

A first portion 51 of the semiconductor region 55 is connected to one ofthe multiple third interconnects 73. A second portion 52 of thesemiconductor region 55 is connected to one of the multiple secondinterconnects 72. The first portion 51 is one of a source or a drain ofthe selection transistor. The second portion 52 is the other of thesource or the drain of the selection transistor. The semiconductorregion 55 further includes a third portion 53. The third portion 53 ispositioned between the first portion 51 and the second portion 52. Thethird portion 53 is a channel portion of the selection transistor.

Memory cells MC are positioned respectively at the crossing portionsbetween the multiple first interconnects 71 and the multiple secondinterconnects 72. The memory cells MC are arranged in the X-axisdirection, the Y-axis direction, and the Z-axis direction. The memorycell MC is, for example, the portion where the first layer 10, thesecond layer 20, the third layer 30, and the fourth layer 40 arestacked. The memory cell MC includes at least the third layer 30.

By a voltage applied to the fourth interconnects 74, the selectiontransistors are switched ON; and one of the multiple secondinterconnects 72 corresponding to one of the multiple thirdinterconnects 73 is selected. One of the multiple memory cells MC isselected according to the voltages applied to the multiple firstinterconnects 71. A voltage is applied between the first layer 10 andthe second layer 20. Thereby, switching between the on-state and theoff-state (a program operation and an erase operation) is performed. Theon-state and the off-state are discriminated according to the electricalresistance between the first layer 10 and the second layer 20 (a readoperation).

FIG. 9 is a schematic cross-sectional view illustrating a portion of thememory device according to the embodiment.

FIG. 9 is a cross-sectional view when the memory device 210 is cut bythe Z-X plane.

As shown in FIG. 9, a first insulating region 59 is provided in thememory device 210. For example, the first insulating region 59corresponds to an inter-layer insulating film.

The multiple second interconnects 72 are arranged in the X-axisdirection and the Y-axis direction. The first insulating region 59 isprovided between the multiple second interconnects 72. For example, agroup (a first group) of a portion of the multiple second interconnects72 is arranged in the second direction (e.g., the X-axis direction). Atleast a portion of the first insulating region 59 is positioned betweenthe multiple second interconnects 72 included in the first group. Onefirst layer 10 (a first layer 10 a) of the multiple first interconnects71 is provided between the conductive portion 71 c and the at least aportion of the first insulating region 59 recited above (the portionbetween the multiple second interconnects 72). In other words, the onefirst layer 10 (the first layer 10 a) of the multiple firstinterconnects 71 extends in the Y-axis direction with the conductiveportion 71 c.

As shown in FIG. 9, the multiple first interconnects 71 are connected ina comb teeth configuration by a fifth interconnect 18E and a sixthinterconnect 18F. The fifth interconnect 18E and the sixth interconnect18F extend in the first direction (e.g., the Z-axis direction). Thesixth interconnect 18F is separated from the fifth interconnect 18E inthe second direction (e.g., the X-axis direction).

The multiple first interconnects 71 are provided between the fifthinterconnect 18E and the sixth interconnect 18F. The multiple firstinterconnects 71 are arranged in the first direction (e.g., the Z-axisdirection). Two of the multiple first interconnects 71 are connected tothe fifth interconnect 18E. On the other hand, another one of themultiple first interconnects 71 is between the two of the multiple firstinterconnects 71 recited above in the first direction (e.g., the Z-axisdirection). The one of the multiple first interconnects 71 recited above(the other one recited above) is connected to the sixth interconnect18F. For example, the odd-numbered interconnects of the multiple firstinterconnects 71 are connected to the fifth interconnect 18E. Theeven-numbered interconnects of the multiple first interconnects 71 areconnected to the sixth interconnect 18F.

One of the multiple first interconnects 71 is positioned between two ofthe multiple second interconnects 72 arranged along the Z-axisdirection. In this first interconnect 71, the conductive portion 71 c ispositioned between two first layers 10 (the first layer 10 a and a firstlayer 10 b) arranged in the Z-axis direction.

The first layer 10 b extends in the second direction (e.g., the X-axisdirection). The first layer 10 a is positioned between the conductiveportion 71 c and a portion of one of the two of the multiple secondinterconnects 72 recited above in the first direction (e.g., the Z-axisdirection). The first layer 10 b is positioned between the conductiveportion 71 c and a portion of the other one of the two of the multiplesecond interconnects 72 recited above in the first direction (the Z-axisdirection).

The third layer 30 and the fourth layer 40 are provided in a regionincluding the conductive portion 71 c and a portion of one of the two ofthe multiple second interconnects 72 recited above. This portion is usedas one of the multiple memory cells MC.

Another third layer 30 and another fourth layer 40 are provided in aregion including the conductive portion 71 c and a portion of the otherone of the two of the multiple second interconnects 72 recited above.This portion is used as another one of the multiple memory cells MC.

FIG. 10 is a schematic cross-sectional view illustrating a portion ofthe memory device according to the embodiment.

FIG. 10 is a cross-sectional view when the memory device 210 is cut bythe Y-Z plane.

The multiple semiconductor regions 55 are provided on the thirdinterconnect 73. The multiple semiconductor regions 55 and the multiplefourth interconnects 74 are arranged alternately along the Z-axisdirection. The fourth interconnect 74 is positioned between secondinsulating regions 56 and 57 in the Z-axis direction. The secondinsulating regions 56 and 57 correspond to inter-layer insulating films.

The multiple first interconnects 71 are arranged in the Y-axisdirection. The first insulating region 59 is provided between themultiple first interconnects 71.

One of the multiple first interconnects 71 is provided between themultiple second interconnects 72 arranged in the Z-axis direction. Themultiple first interconnects 71 are arranged in the Y-axis direction.The memory cells MC are provided at the crossing portions between themultiple second interconnects 72 and the multiple first interconnects71.

In such a memory device 210, the direction of the current flowing in onememory cell MC is, for example, the Z-axis direction. The short lengthof one memory cell MC in the Z-axis direction leads to a high densitymemory device.

According to the embodiments, a memory element can be provided in whichthe on-current is large.

In the specification of the application, “perpendicular” and “parallel”refer to not only strictly perpendicular and strictly parallel but alsoinclude, for example, the fluctuation due to manufacturing processes,etc. It is sufficient to be substantially perpendicular andsubstantially parallel.

Hereinabove, embodiments of the invention are described with referenceto specific examples. However, the invention is not limited to thesespecific examples. For example, one skilled in the art may similarlypractice the invention by appropriately selecting specificconfigurations of components such as the first layer, the second layer,and the third layer, etc., from known art; and such practice is withinthe scope of the invention to the extent that similar effects can beobtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility and are included inthe scope of the invention to the extent that the purport of theinvention is included.

Moreover, all memory elements practicable by an appropriate designmodification by one skilled in the art based on the memory elementsdescribed above as embodiments of the invention also are within thescope of the invention to the extent that the spirit of the invention isincluded.

Various other variations and modifications can be conceived by thoseskilled in the art within the spirit of the invention, and it isunderstood that such variations and modifications are also encompassedwithin the scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A memory element, comprising: a first layer, thefirst layer being conductive; a second layer, the second layer beingconductive; and a third layer including hafnium oxide and being providedbetween the first layer and the second layer, the first layer includinga first region including a first element and a first metallic element,the first element being selected from a group consisting of carbon andnitrogen, a second region including a second metallic element and beingprovided between the first region and the third layer, and a thirdregion including titanium oxide and being provided between the secondregion and the third layer.
 2. The memory element according to claim 1,wherein the second region includes oxygen, and an oxygen concentrationin the third region is higher than an oxygen concentration in the secondregion.
 3. The memory element according to claim 1, wherein the thirdregion does not include the first element, or the third region includesthe first element, and a concentration of the first element in the thirdregion is lower than a concentration of the first element in the firstregion.
 4. The memory element according to claim 1, wherein the thirdlayer includes silicon.
 5. The memory element according to claim 1,wherein the hafnium oxide includes orthorhombic.
 6. The memory elementaccording to claim 1, wherein a long axis of a crystal lattice of thehafnium oxide is aligned with a second direction perpendicular to afirst direction, the first direction being from the second layer towardthe first layer.
 7. The memory element according to claim 1, wherein thefirst metallic element includes at least one selected from the groupconsisting of titanium, tantalum, and tungsten.
 8. The memory elementaccording to claim 1, wherein the second metallic element includes atleast one selected from the group consisting of titanium, cerium,europium, zirconium, barium, aluminum, hafnium, strontium, lanthanum,magnesium, neodymium, ytterbium, samarium, dysprosium, lutetium,holmium, thulium, erbium, calcium, and yttrium.
 9. The memory elementaccording to claim 1, wherein the second layer includes a secondelement, and a standard free energy of formation of an oxide of thesecond metallic element is lower than a standard free energy offormation of an oxide of the second element.
 10. The memory elementaccording to claim 1, further comprising a fourth layer including athird element and being provided between the second layer and the thirdlayer, a standard free energy of formation of an oxide of the secondmetallic element being lower than a standard free energy of formation ofan oxide of the third element.
 11. The memory element according to claim2, wherein the first region does not include oxygen, or the first regionincludes oxygen, and an oxygen concentration in the first region islower than the oxygen concentration in the second region.
 12. The memoryelement according to claim 3, wherein the second region includes thefirst element, and a concentration of the first element in the secondregion is higher than the concentration of the first element in thethird region and lower than the concentration of the first element inthe first region.
 13. The memory element according to claim 1, whereinthe first element is nitrogen, the first metallic element is titanium,and the second metallic element is titanium.
 14. The memory elementaccording to claim 13, wherein the second region includes nitrogen, thethird region includes nitrogen, a nitrogen concentration in the secondregion is lower than a nitrogen concentration in the first region, and anitrogen concentration in the third region is lower than the nitrogenconcentration in the second region.
 15. The memory element according toclaim 13, wherein a titanium concentration in the second region is lowerthan a titanium concentration in the first region, and a titaniumconcentration in the third region is lower than the titaniumconcentration in the second region.
 16. The memory element according toclaim 13, wherein the first region includes oxygen, the second regionincludes oxygen, an oxygen concentration in the second region is lowerthan an oxygen concentration in the third region, and an oxygenconcentration in the first region is lower than the oxygen concentrationin the second region.
 17. The memory element according to claim 1,wherein the second layer includes silicon, and the second metallicelement is titanium.
 18. The memory element according to claim 1,further comprising a fourth layer including silicon and being providedbetween the second layer and the third layer, the second metallicelement being titanium.